the information in this document is subject to change without notice. n-channel gaas mes fet ne6500379a 3w l, s-band power gaas mesfet 1998 ? document no. p13495ej2v0ds00 (2nd edition) date published august 1998 n cp(k) printed in japan data sheet the mark shows major revised points. description the ne6500379a is a 3w gaas mesfet designed for middle power transmitter applications for mobile communication handset and base station systems. it is capable of delivering 3 watt of output power (cw) with high linear gain, high efficiency and excellent distortion. reliability and performance uniformity are assured by necs stringent quality and control procedures. features ? high output power : p o (1db) = +35 dbm typ. ? high linear gain : 10 db typ. ? high power added efficiency: 50% typ. @v ds = 6 v, i dset = 500 ma, f = 1.9 ghz ordering information part number package supplying form NE6500379A-T1 79a 12 mm tape width, 1 kpcs/reel remark to order evaluation samples, please contact your local nec sales office. (part number for sample order: ne6500379a) absolute maximum ratings (t a = 25c) operation in excess of any one of these parameters may result in permanent damage. parameter symbol ratings unit drain to source voltage v ds 15 v gate to source voltage v gso C7 v drain current i d 5.6 a gate current i g 50 ma total power dissipation p t 21 w channel temperature t ch 150 c storage temperature t stg C65 to +150 c caution please handle this device at static-free workstation, because this is an electrostatic sensitive device.
2 ne6500379a recommended operating limits characteristics symbol test conditions min. typ. max. unit drain to source voltage v ds 6.0 6.0 v gain compression gcomp 3.0 db channel temperature t ch +125 c electrical characteristics (t a = 25c, unless otherwise specified, using nec standard test fixture.) characteristics symbol test conditions min. typ. max. unit saturated drain current i dss v ds = 2.5 v, v gs = 0 v 4.5 a pinch-off voltage v p v ds = 2.5 v, i d = 21 ma C3.6 C1.6 v gate to drain break down voltage bv gd i gd = 21 ma 17 v thermal resistance r th channel to case 5 6 c/w output power at 1 db gain compression point p o(1db) 35.0 dbm drain current i d 1.0 a power added efficiency h add 50 % linear gain note 1 g l f = 1.9 ghz, v ds = 6.0 v rg = 30 w i dset = 500 ma (rf off) note 2 9.0 10.0 db notes 1. pin = 0 dbm 2. dc performance is 100% testing. rf performance is testing several samples per wafer. wafer rejection criteria for standard devices is 1 reject for several samples.
3 ne6500379a output power, drain current and gate current vs. input power v ds = 6 v i dset = 500 ma (rf off) r g = 30 f = 1.9 gh z 40 30 25 20 15 10 30 25 20 15 10 5 0 pout [dbm] pin [dbm] ? 0 1500 1000 500 0 i g [ma] i d [ma] 35 5 10 15 20 35 pout i g i d
4 ne6500379a application circuit example (unit: mm) tantalum condenser 100 f m tantalum condenser 47 f m rg 1000 p /4 open stub l /4 open stub l input output c1 3 32.5 5 5 19 13 1 1 6.5 4 50 line /4 line l c2 gnd substrate: teflon glass ( r = 2.6) t = 0.8 mm e f = 1.9 gh z vds = 6 v i dset = 500 ma (rf off) c1 = 30 pf c2 = 30 pf rg = 30 2 6 4 4.5 25 2 5 8 2 4 4 4 3 3 1 55 3 vgs vds
5 ne6500379a ne6500379a s-parameters test conditions: v ds = 6.0 v, i dset = 500 ma frequency s 11 s 21 s 12 s 22 mhz mag. ang. (deg.) mag. ang. (deg.) mag. ang. (deg.) mag. ang. (deg.) 1400 0.950 173.0 0.933 93.1 0.019 54.0 0.833 170.5 1450 0.946 172.6 0.906 91.6 0.020 54.9 0.841 170.5 1500 0.950 171.9 0.884 92.8 0.019 58.1 0.832 169.6 1550 0.947 171.4 0.851 93.3 0.020 58.3 0.837 169.6 1600 0.967 171.6 0.847 94.0 0.020 61.0 0.847 170.2 1650 0.948 170.3 0.818 92.5 0.021 62.7 0.838 168.8 1700 0.946 169.8 0.816 94.8 0.021 63.2 0.835 168.2 1750 0.944 169.0 0.762 93.0 0.022 63.8 0.838 168.0 1800 0.945 168.5 0.787 91.1 0.022 67.7 0.836 166.8 1850 0.947 167.8 0.742 94.4 0.022 66.2 0.833 166.9 1900 0.944 167.1 0.716 88.6 0.024 68.4 0.835 165.6 1950 0.939 166.2 0.704 92.6 0.022 68.5 0.835 165.8 2000 0.945 165.5 0.665 91.1 0.024 69.3 0.831 164.9 2050 0.944 164.9 0.655 93.3 0.023 68.2 0.834 164.5 2100 0.945 163.9 0.641 89.6 0.024 73.0 0.831 162.9 2150 0.936 163.4 0.621 96.7 0.024 69.6 0.828 162.4 2200 0.950 162.4 0.592 91.0 0.026 75.8 0.828 161.7
6 ne6500379a 79a package dimensions (unit: mm) source source gate gate drain drain 0.4 0.15 5.7 max. 5.7 max. 0.6 0.15 0.8 0.15 4.4 max. 4.2 max. 0.9 0.2 0.2 0.1 bottom view 3.6 0.2 1.5 0.2 1.2 max. 1.0 max. 0.8 max. 79a package recommended p.c.b. layout (unit: mm) drain gate source 0.5 0.5 0.5 1.2 5.9 6.1 through hole 0.2 33 1.0 4.0 1.7 stop up the hole with a rosin or something to avoid solder flow. f
7 ne6500379a recommended soldering conditions this product should be soldered under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nec sales representative. soldering method soldering conditions recommended condition symbol infrared reflow package peak temperature: 235c or below time: 30 seconds or less (at 210c) count: 2, exposure limit note : none ir35-00-2 partial heating pin temperature: 260c time: 5 seconds or less (per pin row) exposure limit note : none C note after opening the dry pack, keep it in a place below 25c and 65% rh for the allowable storage period. caution do not use different soldering methods together (except for partial heating).
ne6500379a caution the great care must be taken in dealing with the devices in this guide. the reason is that the material of the devices is gaas (gallium arsenide), which is designated as harmful substance according to the law concerned. keep the law concerned and so on, especially in case of removal. the application circuits and their parameters are for reference only and are not intended for use in actual design-ins. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96. 5
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